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VKM 40-06P1
CoolMOS Power MOSFET
in ECO-PAC 2
N-Channel Enhancement Mode
Low R DSon , High V DSS MOSFET
Package with Electrically Isolated Base
Preliminary data
L4
L6
I D25 = 38 A
V DSS = 600 V
R DSon = 70 m ?
 )
NTC
K  2
K  3
L9
P  8
R  8
X  5
A 
E  0
F  0
K  0
MOSFET
T  8
V  8
X  8
Applications
Pin arrangement see outlines
Symbol
Conditions
Maximum Ratings
? ECO-PAC 2 with DCB Base
V DSS
V GS
I D25
I D90
d V /dt
E AS
E AR
T VJ = 25°C to  50°C
T C = 25°C
T C = 90°C
V DS < V DSS ; I F < 50 A; | di F /dt | < 200 A/μs
T VJ =  50°C
I D =  0 A; L = 36 mH; T C = 25°C
I D = 20 A; L = 5 mH; T C = 25°C
600
± 20
38
25
6
 .8
 
V
V
A
A
V/ns
J
mJ
- Electrical isolation towards the heatsink
- Low coupling capacitance to the
heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability
of chip on DCB
- solderable pins for DCB mounting
? fast CoolMOS power MOSFET
- High blocking capability
- Low on resistance
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
- Avalanche rated for unclamped
inductive switching (UIS)
min.
typ.
max.
- Low thermal resistance
R DSon
V GS(th)
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
R thJC
V GS =  0 V; I D = I D90
V DS = 20 V; I D = 3 mA
V DS = V DSS ; V GS = 0 V; T VJ = 25°C
T VJ =  25°C
V GS = ± 20 V; V DS = 0 V
V GS =  0 V; V DS = 350 V; I D = 50 A
V GS =  0 V; V DS = 380 V
I D = 25 A; R G =  .8 ?
per MOSFET
3.5
60
220
55
 25
30
95
 00
 0
70
5.5
25
 00
0.45
m ?
V
μA
μA
nA
nC
nC
nC
ns
ns
ns
ns
K/W
due to reduced chip thickness
? Enhanced total power density
Applications
? Switched mode power supplies (SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
Data according ot IEC 60747 refer to a single diode or transistor unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? IXYS 2007 All rights reserved
 ) CoolMOS is a trademark of Infineon Technologies AG.
 -3
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